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| inchange semiconductor isc product specification isc silicon pnp power transistor BD314 description excellent safe operating area dc current gain-h fe = 25(min.)@i c = -4a collector-emitter saturation voltage- : v ce(sat )= -1.0 v(max)@ i c = -5a complement to type bd313 applications designed for high quality amplifiers operating up to 60 watts into 4 ohm load. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -20 a i b b base current-continuous -4 a p c collector power dissipation@t c =25 115 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.52 /w isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon pnp power transistor BD314 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -200ma; i b =0 -80 v v ce (sat) collector-emitter saturation voltage i c = -5a; i b = -0.5a b -1.0 v v be (sat) base-emitter saturation voltage i c = -5a; i b = -0.5a b -1.8 v v be( on ) base-emitter on voltage i c = -4a; v ce = -4v -1.5 v i cbo collector cutoff current v cb = -80v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -7.0v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -4a; v ce = -4v 25 h fe-2 dc current gain i c = -10a; v ce = -4v 5 f t current gain-bandwidth product i c = -0.5a; v ce = -10v;f=1.0mhz 4 mhz isc website www.iscsemi.cn 2 |
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